26.04.2002 page 1 ws ds m 1 BGB550 medium power broadband amplifier mmic vd = 2.0v, id = 100ma symbol parameter frequency unit value is21i 2 / (g ma ) power gain / (max. available) 900 mhz db 17 (22) 1.8 ghz 11 (16) nf noise figure 900 mhz db 1.3 1.8 ghz 1.5 p-1db output compression point 900 mhz dbm 19 1.8 ghz 19 oip3 output third order intercept point 900 mhz dbm 28 1.8 ghz 28 features and benefits - mirror biased rf transistor - collector current up to 350ma - low operation voltage v cc < 3v - high output power & linearity - input matching improved by l ext - sct595 package features and benefits - mirror biased rf transistor - collector current up to 350ma - low operation voltage v cc < 3v - high output power & linearity - input matching improved by l ext - sct595 package new b,1 e, 2,5 c, 4 bias, 3 internal circuit rfin l ext ~ nh mp: now
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